BUP305D Просмотр технического описания (PDF) - Infineon Technologies

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производитель

BUP305D

IGBT With Antiparallel Diode

Infineon Technologies 

Typ. output characteristics

IC = f(VCE)

parameter: tp = 80 µs, Tj = 125 °C

BUP 305 D

Typ. transfer characteristics

IC = f (VGE)

parameter: tP = 80 µs, VCE = 20 V, Tj = 25 °C

Typ. saturation characteristics

VCE(sat) = f (VGE)

parameter: Tj = 25 °C

Typ. saturation characteristics

VCE(sat) = f (VGE)

parameter: Tj = 125 °C

Semiconductor Group

5

Dec-02-1996

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