BC857BT Просмотр технического описания (PDF) - Galaxy Semi-Conductor

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производитель

BC857BT

PNP General Purpose Transistor

Galaxy Semi-Conductor 

Production specification

PNP General Purpose Transistor

BC856T/BC857T

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

SYMBOL PARAMETER

CONDITIONS

MIN. Typ. MAX. UNIT

ICBO

IEBO

hFE

VCE(sat)

VBE

CC

Ce

F

Collector cut-off current

Emitter cut-off current

DC current gain

BC856AT; BC856BT

BC857AT; BC857BT

BC857CT

collector-emitter saturation

voltage

Base- emitter voltage

Collector capacitance

Emitter capacitance

Noise figure

fT

transition frequency

Note 1.Pulse test:tp≤300uS;δ≤0.02

IE=0,VCB=-30V

IE=0,VCB=-30V,Tj=150℃

IC=0,VEB=-5V

VCE=-5V,IC=-2mA

125 -

220 -

420 -

IC=-10mA,IB=-0.5mA

IC=-100mA,IB=-5mA(note1)

IC=-2mA, VCE=-5V

IC=-10mA, VCE=-5V

IE=0,VCB=-10V,f=1MHz

-580

IC=0,VEB=-0.5V,f=1MHz

10

IC=200uA,VCE=-5V,

RS=2kΩ,f=1kHZ,B=200Hz

IC=-10mA,VCE =-5V,

100

f=100MHz

TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

-15 nA

-5 uA

-100 nA

250

475

800

-200 mV

-400 mV

-700 mV

-770 mV

2.5 pF

pF

10 dB

MHz

H031

Rev.A

www.gmicroelec.com

2

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