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B1016

Silicon PNP Power Transistor

New Jersey Semiconductor 

J.E.11E.U

Cx

10ducts., Unc.

20 STERNAVE.

SPRINGFIELD, NEW JERSEY 07081

U.S.A.

Silicon PNP Power Transistor

TELEPHONE: (973) 376-2922

(212)227-6005

FAX: (973) 376-8960

2SB1016

DESCRIPTION

• Low Collector Saturation Voltage-

: VCE(satr -2.0V(Max)@lc= -4A

• Good Linearity of hFE

• Complement to Type 2SD1407

f

1 23

2

z Collector

3 Knitter

TO-220F* package

APPLICATIONS

• Designed for audio frequency power amplifier applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25'C)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-100

V

VOEO

Collector-Emitter Voltage

-100

V

•*—- 1

•^•<<

*u '

-

f!

'

,

H

t

f;

'

/

.. -.-v

VEBO

Emitter-Base Voltage

Ic

Collector Current-Continuous

IB

Base Current-Continuous

Collector Power Dissipation

PC

@ Tc~25°C

Tj

Junction Temperature

Tstg

Storage Temperature Range

-5

V

-5

A

-0.5

A

30

W

150

°C

-55-150

•c

mm

HIM WIN

A 16.85

B 9,64

C 4.35

D 0.75

F 3.20

G r 6.90

H 5.15

J 0.45

K 13.35

L 1.10

N 4.98

Q 4.35

R 2.55

s 2.70

1.75

t^f 1.30

MAX

17.15

10.10

4.65

0.90

3.40

7.2.0

546

0.75

13.65

1.30

5.18

5.15

3.25

2.90

2.05

1.50

N.I Senii-CunJuctors reserves the right to change tost conditions, parameter limits and package dimensions without

notice. Information furnished by N.I Scmi-Conductors is believed to he hoth accurate mid reliable at the time ofgoing

lo press. I loue\er. N:J Somi-Coiuliictors assumes no responsibility for an> errors or omissions discovered in its use."

N.I Scmi-Coiidiictors enauiniges customers to verilv that datasheets are eniTciil before placing orders.

Quality 5emi-Conductors

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