2SD1271 Просмотр технического описания (PDF) - Inchange Semiconductor
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2SD1271 Datasheet PDF : 5 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1271 2SD1271A
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO
Collector-emitter
voltage
2SD1271
2SD1271A
IC=10mA , IB=0
VCEsat Collector-emitter saturation voltage IC=5A ;IB=0.25A
VBEsat
ICBO
IEBO
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
IC=5A ;IB=0.25A
VCB=100V; IE=0
VEB=5V; IC=0
hFE-1
DC current gain
IC=0.1A ; VCE=2V
hFE-2
DC current gain
IC=3A ; VCE=2V
fT
Transition frequency
IC=0.5A ; VCE=10V
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=3A ;IB1=-IB2=0.3A
VCC=50V
hFE-2 Classifications
R
Q
P
60-120 90-180 130-260
MIN TYP. MAX UNIT
80
V
100
0.5
V
1.5
V
10
μA
50
μA
45
60
260
30
MHz
0.5
μs
1.5
μs
0.1
μs
2
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