FW232 Просмотр технического описания (PDF) - SANYO -> Panasonic

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производитель

FW232

N-Channel Silicon MOSFET

SANYO -> Panasonic 

FW232

Continued from preceding page.

Parameter

Symbol

Static Drain-to-Source On-State Resistance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-ON Delay Time

Rise Time

Turn-OFF Delay Time

Fall Time

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain “Miller” Charge

Diode Forward Voltage

RDS(on)1

RDS(on)2

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

Qg

Qgs

Qgd

VSD

Conditions

ID=8A, VGS=4V

ID=2A, VGS=2.5V

VDS=10V, f=1MHz

VDS=10V, f=1MHz

VDS=10V, f=1MHz

See specified Test Circuit

See specified Test Circuit

See specified Test Circuit

See specified Test Circuit

VDS=10V, VGS=10V, ID=8A

VDS=10V, VGS=10V, ID=8A

VDS=10V, VGS=10V, ID=8A

IS=8A, VGS=0

Ratings

Unit

min

typ

max

17

23 mΩ

23

32 mΩ

1550

pF

310

pF

190

pF

22

ns

110

ns

200

ns

170

ns

60

nC

2.6

nC

10

nC

0.9

1.2

V

Switching Time Test Circuit

VIN

4V

0V

PW=10µs

D.C.≤1%

VIN

G

VDD=15V

ID=8A

RL=1.875Ω

D

VOUT

Electrical Connection

D1

D1

D2

D2

P.G

50Ω

FW232

S

S1 G1 S2

G2

(Top view)

ID -- VDS

15

3.5V

12

1.5V

9

6

3

VGS=1.0V

0

0

0.5

1.0

1.5

2.0

2.5

3.0

Drain-to-Source Voltage, VDS -- V IT02209

35

RDS(on) -- VGS

Ta=25°C

30

25

ID=2A 8A

20

15

10

5

0

0

2

4

6

8

10

12

Gate-to-Source Voltage, VGS -- V IT02211

15

VDS=10V

12

ID -- VGS

9

6

3

0

0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8

Gate-to-Source Voltage, VGS -- V IT02210

RDS(on) -- Ta

40

35

30

25

20

I DI=D2=A8, AV,GVSG=2S.=54VV

15

10

5

0

--50 --25

0

25 50 75 100 125 150 175

Ambient Temperature, Ta -- °C

IT02212

No.6618-2/4

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