FW231 Просмотр технического описания (PDF) - SANYO -> Panasonic

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Компоненты Описание

производитель

FW231

N-Channel Silicon MOSFET

SANYO -> Panasonic 

FW231

Continued from preceding page.

Parameter

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-ON Delay Time

Rise Time

Turn-OFF Delay Time

Fall Time

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain "Miller" Charge

Diode Forward Voltage

Symbol

Conditions

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

Qg

Qgs

Qgd

VSD

VDS=10V, f=1MHz

VDS=10V, f=1MHz

VDS=10V, f=1MHz

See specified Test Circuit

See specified Test Circuit

See specified Test Circuit

See specified Test Circuit

VDS=10V, VGS=10V, ID=9A

VDS=10V, VGS=10V, ID=9A

VDS=10V, VGS=10V, ID=9A

IS=9A, VGS=0

Ratings

Unit

min typ max

1950

pF

550

pF

370

pF

24

ns

440

ns

200

ns

300

ns

60

nC

2.8

nC

10

nC

0.82

1.2 V

Switching Time Test Circuit

4V VIN

0V

VIN

PW=10µs

D.C.≤1%

VDD=10V

ID=9A

RL=1.1Ω

D

VOUT

Electrical Connection

D1 D1 D2 D2

8765

G

P.G

50Ω

S FW231

A11946

18

3.5V

3.0V

16

2.5V

14

I D - VDS

12

10

1.5V

8

6

4

2

VGS=1.0V

00

0.5

1.0

1.5

2.0

2.5

3.0

Drain-to-Source Voltage, VDS – V

5

VDS=10V

| yfs | - I D

3

2

Ta=-25°C75°C

25°C

10

7

5

3

2

1.0

0.1

2 3 5 7 1.0

2 3 5 7 10

Drain Current, ID – A

23

1234

S1 G1 S2 G2

A12026

ID - VGS

18

16

14

12

10

8

6

4

2

0

0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8

Gate-to-Source Voltage, VGS – V

RDS(on) - VGS

60

Ta=25°C

50

ID=9A

40

ID=2A

30

20

10

00

2

4

6

8

10

12

Gate-to-Source Voltage, VGS – V

No.6071-2/4

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