2SB947 Просмотр технического описания (PDF) - New Jersey Semiconductor

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2SB947

Silicon PNP Power Transistor

New Jersey Semiconductor 

20 STERN AVE.

SPRINGFIELD, NEW JERSEY 07081

U.S.A.

, Una.

Silicon PNP Power Transistor

TELEPHONE: (973) 376-2922

(212)227-6005

FAX: (973) 376-8960

2SB947

DESCRIPTION

• Low Collector Saturation Voltage-

: VCE<sat)= -0.6V(Max)@lc= -7A

• High Speed Switching

APPLICATIONS

• Designed for low-voltage switching applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25'C)

SYMBOL

PARAMETER

VALUE

UNIT

f

.," 2 3

2

-^

PIJT: 1 Base

2 Collector

3 Emitter

TO-220Fa package

- G -•-

iit|

QT~

'

A

\

,-F

/

'

/

VCBO Collector-Base Voltage

VCEO Collector-Emitter Voltage

-40 V 3 - A : : : ' ' :":^L

-20

V

K

^ ^_v

VEBO

Emitter-Base Voltage

•

-5

V

Ic

Collector Current-Continuous

ICM

Collector Current-Peak

Collector Power Dissipation

@ Ta-25'C

PC

Collector Power Dissipation

@ TC-25'C

Tj

Junction Temperature

Tstg

Storage Temperature Range

-10

A

-15

A

2

W

35

150

r

-55-150

•c

-»C»-

-*N*-

mm

DIM WIN

A 16.S5

B 9.54

C 4.35

D 0.75

F 3.20

G 6.90

K 5.15

J 0.45

K 13.35

L 1.10

N 4.98

Q 4.S5

R 2.6E.

S 2.70

U 1.75

V 1-30

MAX

17.15

10.10

4.65

0.&0

3.40

7,20

S.45

0.75

13.65

1.30

5.18

5.15

3.25

2.90

2.05

1.50

N,l Semi-Conductors reserves the right to change test conditions, parameter limits and paekagt: dimensions \\ithout

notice. Intbnnation furnished by NJ Semi-C'ondiictors is believed w he both accurate and reliable at the time of going

to press. I hmever. NJ Semi-Conductors assumes no responsibility tor an> errors or omissions discovered in itsuse.

N.I Semi-Conductors encouiaues customers to verily that datasheets are current before placing orders.

Quality Semi-Conductors

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