2SB1105 Просмотр технического описания (PDF) - New Jersey Semiconductor
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2SB1105 Datasheet PDF : 2 Pages
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e'xj
J
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, Una.
Silicon PNP Darlington Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2SB1105
"2
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -120V(Min)
• High DC Current Gain-
: hFE= 1000(Min)@ (VCE= -3V, lc= -1.5
• Complement to Type 2SD1605
APPLICATIONS
• Designed for low frequency power amplifiers applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25°C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-120
V
VCEO Collector-Emitter Voltage
-120
V
VEBO
Emitter-Base Voltage
-7
V
Ic
Collector Current-Continuous
-3
A
ICM
Collector Current-Peak
Collector Power Dissipation
PC
@TC=25'C
Tj
Junction Temperature
-6
A
30
W
150
•c
Tstg
Storage Temperature
-55-150
'C
!
';
'"
PIH: 1 Base
2 Collector
3 Emitter
TO-ZZOC package
.• B *• ?
*S
j
fuf
J-ef't
.- A "
f»
-f *- L
K
1
C
A
- IV D
G *-
mm
D|M WIN MAX
A 15.50 15.90
B 9.90 10,20
C 4.20 4.50
D 0.70 0.90
F 3.40 3.70
G 4.98 5.18
H 2.68 2.90
J 0.44 0.60
K 13.00 13.40
L 1.10 1.45
Q 2.70 2.90
R 2.30 2.70
S 1.29 1.35
U 6.45 6.65
V 8.66 8.86
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions \vithout
notice. Information furnished by NJ Semi-Coiuluctors is believed to be both accurate mid reliable at the time of yoint
lii press. I luuever. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
N.I Semi-CiHiduclors encourn.ucs customers to verily that datasheets are current before placing orders.
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