2SB1075 Просмотр технического описания (PDF) - New Jersey Semiconductor

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производитель

2SB1075

Silicon PNP Power Transistor

New Jersey Semiconductor 

Silicon PNP Power Transistor

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CBO Collector-Base Breakdown Voltage

lc=-1mA;lE=0

V(BR)CEO Collector-Emitter Breakdown Voltage lc= -2mA; IB= 0

VcE(sat) Collector-Emitter Saturation Voltage lc= -3A; IB= -0.3A*

VeE(sat) Base-Emitter Saturation Voltage

lc= -2A; IB= -0.2A

ICBO

Collector Cutoff Current

VCB= -50V; IE= 0

I CEO

Collector Cutoff Current

VCE=-10V; IB=0 .

IEBO

Emitter Cutoff Current

VEB= -5V; lc= 0

hFE

DC Current Gain

lc= -1A; VCE= -5V

fi

Current-Gain—Bandwidth Product

lc= -0.5A; VCE= -5V

COB

Output Capacitance

* Pulse Test

IE=0;VCB=-20V, ftest=1MHz

hFE Classifications

p

Q

R

50-100 80-160 120-220

2SB1075

MIN TYP. MAX UNIT

-50

V

-40

V

-1.0

V

-1.5 V

-1.0 M A

-100 u A

-10 u A

50

220

150

MHz

40

pF

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