2SB1530 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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Компоненты Описание

производитель

2SB1530

Silicon PNP Triple Diffused

Hitachi -> Renesas Electronics 

Maximum Collector Dissipation Curve

30

20

TC

10

1.5 W

Ta

0

50

100

150

Ambient temperature Ta (°C)

Case temperature TC (°C)

2SB1530

Area of Safe Operation

–10

–5

IC(max)(Continuous)

–2

(–15 V, –2 A)

–1.0

–0.5

–0.2

(–60 V, –0.4 A)

–0.1

–0.05

–2

(–150 V, –65 mA)

–5 –10 –20 –50 –100 –200

Collector to emitter voltage VCE (V)

Typical Output Characteristics

–1.0 TC = 25°C –8 –7

–0.8

–6

–5

–0.6

–4

–3

–0.4

–2

–0.2

–1 mA

IB = 0

0

–4 –8 –12 –16 –20

Collector to emitter voltage VCE (V)

–1000

–500

–200

Typical Output Characteristics

VCE = –4 V

TC = –75°C 25 –25

–100

–50

–20

–10

–5

–0.4 –0.5 –0.6 –0.7 –0.8 –0.9 –1.0

Base to emitter voltage VBE (V)

3

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