2N6535 Просмотр технического описания (PDF) - Inchange Semiconductor
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2N6535 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2N6535
DESCRIPTION
·High DC Current Gain-
: hFE= 500(Min.)@IC= 3A
·Collector-Emitter Sustaining Voltage-
:VCEO(SUS)= 100V(Min.)
·Low Collector-Emitter Saturation Voltage-
: VCE(sat)= 3.0V(Max.)@ IC= 3A
APPLICATIONS
·Power switching
·Hammer drivers
·Series and shunt regulators
·Audio amplifiers
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100
V
VCER
Collector-Emitter Voltage RBE= 100Ω
100
V
VCEV
Collector-Emitter Voltage VBE= -1.5V
100
V
VCEO
Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current
8
A
ICM
Collector Current-peak
15
A
IB
Base Current
PC
Collector Power Dissipation
@TC=25℃
Tj
Junction Temperature
250
mA
36
W
150
℃
Tstg
Storage Temperature Range
-65~+150 ℃
isc website：www.iscsemi.com
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