MMBT5401 Просмотр технического описания (PDF) - Jiangsu High diode Semiconductor Co., Ltd

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производитель

MMBT5401

SOT-23 Plastic-Encapsulate Transistors

Jiangsu High diode Semiconductor Co., Ltd 

MMBT5401

SOT-23 Plastic-Encapsulate Transistors

TRANSISTOR( P NP )

Features

● Complementary to MMBT5551

● Ideal for Medium Power Amplification and Switching

SOT- 23

Marking:

● 2L

Symbol

VCBO

VCEO

VEBO

IC

PC

RΘJA

Tj

Tstg

Parameter

Value

Collector-Base Voltage

-160

Collector-Emitter Voltage

-150

Emitter-Base Voltage

-5

Collector Current

-600

Collector Power Dissipation

300

Thermal Resistance From Junction To Ambient

416

Junction Temperature

150

Storage Temperature

-55～+150

Unit

V

V

V

mA

mW

℃/W

℃

℃

C

B

E

Electrical Characteristics (Ta=25℃ Unless otherwise specified）

Parameter

Symbol

Collector-base breakdown voltage

Collector-emitter breakdown voltage

V(BR)CBO

V(BR)CEO*

Emitter-base breakdown voltage

V(BR)EBO

Collector cut-off current

ICBO

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Base-emitter saturation voltage

IEBO

hFE(1) *

hFE(2) *

hFE(3) *

VCE(sat)1*

VCE(sat)2*

VBE(sat)1*

VBE(sat)2*

Transition frequency

fT

*Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%.

Test conditions

IC=-100µA, IE=0

IC=-1mA, IB=0

IE=-10µA, IC=0

VCB=-120V, IE=0

VEB=-4V, IC=0

VCE=-5V, IC=-1mA

VCE=-5V, IC=-10mA

VCE=-5V, IC=-50mA

IC=-10mA, IB=-1mA

IC=-50mA, IB=-5mA

IC=-10mA, IB=-1mA

IC=-50mA, IB=-5mA

VCE=-5V,IC=-10mA, f=30MHz

Min Typ Max Unit

-160

V

-150

V

-5

V

-0.1 μA

-0.1 μA

80

100

300

50

-0.2

V

-0.5

V

-1

V

-1

V

100

MHz

CLASSIFICATION OF hFE

RANK

RANGE

L

100-200

H

200-300

High Diode Semiconductor

1

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