BUY69A Просмотр технического описания (PDF) - New Jersey Semiconductor
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BUY69A Datasheet PDF : 2 Pages
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Silicon NPN Power Transistors
ELECTRICAL CHARACTERISTICS
TC=25'C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VcEO(SUS) Collector-Emitter Sustaining Voltage lc= 100mA; IB= 0
VCBO
Collector-Base Voltage
lc=1mA;lE=0
VcE(sat) Collector-Emitter Saturation Voltage lc= 8A; IB= 2.5A
VBE(sat) Base-Emitter Saturation Voltage
lc= 8A; IB= 2.5A
ICES
Collector Cutoff Current
VcE=ratedVCEs; VBE= 0
IEBO
Emitter Cutoff Current
VEB= 8V; lc= 0
hFE
DC Current Gain
lc=2.5A; VCE=10V
fr
Current-Gain—Bandwidth Product
lc= 0.5A; VCE= 10V; f,est= 1MHz
Switching Times
tr
Rise Time
ts
Storage Time
lc=5A; IB1= -Is2= 1A; VCC=250V
tf
Fall Time
BUY69A
MIN MAX UNIT
400
V
800
V
3.3
V
2.2
V
1.0
mA
1.0
mA
15
10
MHz
0.3
us
1.8
us
1.0
us
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