BDT61F Просмотр технического описания (PDF) - Inchange Semiconductor
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BDT61F Datasheet PDF : 2 Pages
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isc Silicon NPN Darlington Power Transistor
INCHANGE Semiconductor
BDT61F
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A; IB= 6mA
VBE(on) Base-Emitter On Voltage
IC= 4A ; VCE= 3V
ICBO
Collector Cutoff Current
VCB= 30V; IE= 0
VCB= 40V; IE= 0; TC= 150℃
ICEO
Collector Cutoff Current
VCE= 40V; IB= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 0.5A ; VCE= 3V
hFE-2
DC Current Gain
IC= 1.5A ; VCE= 3V
hFE-3
DC Current Gain
IC= 4A ; VCE= 3V
MIN TYP. MAX UNIT
80
V
2.5
V
2.5
V
0.2
mA
1.0
0.2
mA
5
mA
2000
750
1000
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