FQAF12N60 Просмотр технического описания (PDF) - Fairchild Semiconductor
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Компоненты Описание
производитель
FQAF12N60 Datasheet PDF : 8 Pages
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Typical Characteristics (Continued)
1.2
1.1
1.0
0.9
Notes :
1. VGS = 0 V
2. ID = 250 A
0.8
-100
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Figure 7. Breakdown Voltage Variation
vs. Temperature
102
Operation in This Area
is Limited by R
DS(on)
101
100 µs 10 µs
1 ms
10 ms
DC
100
10-1
Notes :
1. T = 25 oC
C
2. T = 150 oC
J
3. Single Pulse
10-2
100
101
102
103
VDS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
Notes :
1. V = 10 V
GS
2. ID = 6.0 A
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Figure 8. On-Resistance Variation
vs. Temperature
8
6
4
2
0
25
50
75
100
125
150
TC, Case Temperature []
Figure 10. Maximum Drain Current
vs. Case Temperature
100
D = 0.5
1 0 -1
0 .2
0 .1
0 .05
0 .02
0 .01
sin g le p u lse
N otes :
1 . Z JC(t) = 1 .2 5 /W M a x .
2. D uty F a ctor, D =t /t
12
3 . T JM - T C = P D M * Z JC(t)
PDM
t1
t2
1 0 -2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
101
t , S q u a re W a ve P u lse D u ra tio n [se c]
1
Figure 11. Transient Thermal Response Curve
©2000 Fairchild Semiconductor International
Rev. A, April 2000
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