KSP56 Просмотр технического описания (PDF) - Fairchild Semiconductor

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производитель

KSP56

PNP Epitaxial Silicon Transistor

Fairchild Semiconductor 

Typical Characteristics

1000

VCE = -1V

100

10

-1

-10

-100

-1000

IC[mA], COLLECTOR CURRENT

Figure 1. DC current Gain

-1000

-100

VCE = -1V

-10

-1

-0.0

-0.2

-0.4

-0.6

-0.8

-1.0

-1.2

VBE[V], BASE-EMITTER VOLTAGE

Figure 3. Base-Emitter On Voltage

-10

-1

VBE(sat)

IC = 10 IB

-0.1

VCE(sat)

-0.01

-1

-10

-100

IC[mA], COLLECTOR CURRENT

-1000

Figure 2. Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

1000

VCE = -1V

100

10

-1

-10

-100

-1000

IC[mA], COLLECTOR CURRENT

Figure 4. Current Gain Bandwidth Product

©2002 Fairchild Semiconductor Corporation

Rev. A2, September 2002

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