HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6702-B
Issued Date : 1993.04.12
Revised Date : 2000.09.30
Page No. : 1/3
HSB507
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HSB507 is designed for use in power amplifier and switching
circuits.
Absolute Maximum Ratings (Ta=25°C)
• Maximum Temperatures
Storage Temperature ............................................................................................ -50 ~ +150 °C
Junction Temperature ................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Tc=25°C) .................................................................................... 30 W
Total Power Dissipation (Ta=25°C) ...................................................................................... 2 W
• Maximum Voltages and Currents
BVCBO Collector to Base Voltage ..................................................................................... -60 V
BVCEO Collector to Emitter Voltage.................................................................................. -60 V
BVEBO Emitter to Base Voltage .......................................................................................... -5 V
IC Collector Current ............................................................................................................. -3 A
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
-60
-
BVCEO
-60
-
BVEBO
-5
-
ICBO
-
-
IEBO
-
-
ICEO
-
-
*VCE(sat)
-
-
*VBE(on)
-
-
*hFE1
40
-
*hFE2
40
-
fT
-
8
Classification Of hFE2
Max.
-
-
-
-100
-1
-5
-1
-1.5
-
320
-
Unit
Test Conditions
V
V
V
uA
mA
mA
V
V
MHz
IC=-1mA, IE=0
IC=-10mA, IB=0
IE=-1mA, IC=0
VCB=-20V, IE=0
VEB=-4V, IC=0
VCE=-60V, IB=0
IC=-2A, IB=-0.2A
IC=-1A, VCE=-2V
IC=-0.1A, VCE=-2V
IC=-1A, VCE=-2V
VCE=-5V, IC=-500mA, f=100MHz
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
Rank
hFE
C
40-80
D
60-120
E
100-200
F
160-320
HSMC Product Specification