KSB1098 Просмотр технического описания (PDF) - Fairchild Semiconductor

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производитель

KSB1098

PNP Silicon Darlington Transistor

Fairchild Semiconductor 

KSB1098

Low Frequency Power Amplifier

• Low Speed Switchng Industrial Use

• Complement to KSD1589

1

TO-220F

1.Base 2.Collector 3.Emitter

PNP Silicon Darlington Transistor

Absolute Maximum Ratings TC=25°C unless otherwise noted

Symbol

Parameter

VCBO

Collector-Base Voltage

VCEO

Collector-Emitter Voltage

VEBO

Emitter-Base Voltage

IC

Collector Current (DC)

ICP

*Collector Current (Pulse)

IB

Base Current

PC

Collector Dissipation (Ta=25°C)

PC

Collector Dissipation (TC=25°C)

TJ

Junction Temperature

TSTG

Storage Temperature

* PW≤300µs, Duty Cycle≤10%

Value

- 100

- 100

-7

-5

-8

- 0.5

2

20

150

- 55 ~ 150

Units

V

V

V

A

A

A

W

W

°C

°C

Electrical Characteristics TC=25°C unless otherwise noted

Symbol

Parameter

Test Condition

ICBO

Collector Cut-off Current

IEBO

Emitter Cut-off Current

hFE1

hFE2

* DC Current Gain

VCE(sat)

* Collector-Emitter Saturation Voltage

VBE(sat)

* Base-Emitter Saturation Voltage

tON

Turn ON Time

tSTG

Storage Time

tF

Fall Time

* Pulse Test: PW≤350µs, Duty Cycle≤2% Pulsed

VCB = - 100V, IE = 0

VEB = - 5V, IC = 0

VCE = - 2V, IC= - 3A

VCE = - 2V, IC = - 5A

IC = - 3A, IB = - 3mA

IC = - 3A, IB = - 3mA

VCC = - 50V, IC = - 3A

IB1 = - IB2 = - 3mA

RL = 17Ω

Min.

2000

500

Typ.

0.5

1

1

Max.

-1

-3

15K

Units

µA

mA

- 1.5

V

-2

V

µs

µs

µs

hFE Classification

Classification

hFE1

R

2000 ~ 5000

O

3000 ~ 7000

Y

5000 ~ 15000

©2000 Fairchild Semiconductor International

Rev. A, February 2000

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