KSB834W Просмотр технического описания (PDF) - Inchange Semiconductor

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производитель

KSB834W

Silicon PNP Power Transistor

Inchange Semiconductor 

isc Silicon PNP Power Transistor

INCHANGE Semiconductor

KSB834W

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

VCE(sat)

Collector-Emitter Saturation Voltage

VBE(on)

Base-Emitter On Voltage

ICBO

Collector Cutoff Current

CONDITIONS

IC= -3.0A; IB= -300mA

IC= -0.5A; VCE=-5V

VCB= -60V; IE= 0

MIN

TYP MAX UNIT

-1

V

-1

V

-100 μA

IEBO

Emitter Cutoff Current

VEB= -7V; IC= 0

-100 μA

hFE1

DC Current Gain

hFE2

DC Current Gain

IC=- 0.5A; VCE=- 5V

60

200

IC= -3A; VCE= -5V

20

fT

Current-Gain—Bandwidth Product

IC= -0.5A; VCE= -5V

9

MHz

Cob

Collector output capacitance

VCB=-10V ,IE=0,f=1MHz

150

pF

 hFE-1 Classifications

O

Y

60-120 100-200

isc website：www.iscsemi.com

2 isc & iscsemi is registered trademark

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