KSC5603D Просмотр технического описания (PDF) - Fairchild Semiconductor
Номер в каталоге
Компоненты Описание
производитель
KSC5603D Datasheet PDF : 5 Pages
| |||
February 2010
KSC5603D
NPN Silicon Transistor, Planar Silicon Transistor
Features
• High Voltage High Speed Power Switch Application
• Wide Safe Operating Area
• Built-in Free Wheeling Diode
• Suitable for Electronic Ballast Application
• Small Variance in Storage Time
Equivalent Circuit
C
B
1
TO-220
E
1.Base 2.Collector 3.Emitter
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current (DC)
ICP
*Collector Current (Pulse)
IB
Base Current (DC)
IBP
*Base Current (Pulse)
PC
Power Dissipation(TC=25°C)
TJ
Junction Temperature
TSTG
Storage Temperature
* Pulse Test: Pulse Width=5ms, Duty Cycle<10%
Value
1600
800
12
3
6
2
4
100
150
-65 to +150
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
RθJC
RθJA
TL
Thermal Resistance
Junction to Case
Junction to Ambient
Maximun Lead Temperature for Soldering Purpose
: 1/8” from Case for 5 seconds
Rating
1.25
80
270
Units
V
V
V
A
A
A
A
W
°C
°C
Units
°C/W
°C/W
°C
© 2010 Fairchild Semiconductor Corporation
KSC5603D Rev. C2
1
www.fairchildsemi.com
Share Link: 