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HVM14 Просмотр технического описания (PDF) - Renesas Electronics
Номер в каталоге
Компоненты Описание
производитель
HVM14
Silicon Epitaxial Planar PIN Diode for High Frequency Attenuator
Renesas Electronics
HVM14 Datasheet PDF : 5 Pages
1
2
3
4
5
HVM14
Absolute Maximum Ratings
(Ta = 25
°
C)
Item
Reverse voltage
Forward current
Power dissipation
Junction temperature
Storage temperature
Symbol
V
R
I
F
Pd
Tj
Tstg
Value
Unit
50
V
50
mA
100
mW
125
°
C
–55 to +125
°
C
Electrical Characteristics
(Ta = 25
°
C)
Item
Symbol Min
Forward voltage
V
—
F
Reverse current
I
R
—
Capacitance
C
—
Forward resistance r
—
f
ESD-Capability *
1
—
200
Typ Max
—
1.0
—
100
0.25 —
—
7.0
—
—
Note:
1.
Failure
criterion;
I
R
≥
200
nA
at
V
R
=
50
V
Unit
V
nA
pF
Ω
V
Test Condition
I = 50 mA
F
V
R
= 50 V
V
R
= 50 V, f = 1 MHz
I = 10 mA, f = 100 MHz
F
C = 200 pF, Both forward and reverse
direction 1 pulse.
Rev.4.00, Oct. 08.2003, page 2 of 4
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