KTA1664 Просмотр технического описания (PDF) - Foshan Blue Rocket Electronics Co.,Ltd.

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Компоненты Описание

производитель

KTA1664

Silicon PNP transistor in a SOT-89 Plastic Package

Foshan Blue Rocket Electronics Co.,Ltd. 

KTA1664

Rev.E Mar.-2016

DATA SHEET

极限参数 / Absolute Maximum Ratings(Ta=25℃)

参数

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current - Continuous

Collector Base – Continuous

Collector Power Dissipation

Collector Power Dissipation*

Junction Temperature

Storage Temperature Range

*:mounted on ceramic substrate(250mm2×0.8t)

*装于 250mm2×0.8t 的陶瓷上。

符号

Symbol

VCBO

VCEO

VEBO

IC

IB

PC

*PC

Tj

Tstg

数值

Rating

-35

-30

-5.0

-800

-160

500

1.0

150

-55～150

单位

Unit

V

V

V

mA

mA

mW

W

℃

℃

电性能参数 / Electrical Characteristics(Ta=25℃)

参数

Parameter

Collector to Emitter Breakdown

Voltage

Collector Cut-Off Current

Emitter Base Cut-Off Current

DC Current Gain

Collector to Emitter Saturation

Voltage

Base to Emitter Voltage

Transition Frequency

Collector Output Capacitance

符号

Symbol

测试条件

Test Conditions

最小值 典型值 最大值 单位

Min Typ Max Unit

VCEO IC=-10mA IB=0

-30

V

ICBO VCB=-35V IE=0

IEBO VEB=-5.0V IC=0

hFE(1) VCE=-1.0V IC=-100mA 100

hFE(2) VCE=-1.0V IC=-700mA 35

-0.1 μA

-0.1 μA

320

VCE(sat) IC=-500mA IB=-20mA

-0.7 V

VBE VCE=-1.0V IC=-10mA

fT VCE=-5.0V IC=-10mA

Cob

VCB=-10V

f=1.0MHz

IE=0

-0.5

-0.8 V

120

MHz

19

pF

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