BC640 Просмотр технического описания (PDF) - Foshan Blue Rocket Electronics Co.,Ltd.

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Компоненты Описание

производитель

BC640

Silicon PNP transistor in a TO-92 Plastic Package

Foshan Blue Rocket Electronics Co.,Ltd. 

BC640

Rev.E Mar.-2016

极限参数 / Absolute Maximum Ratings(Ta=25℃)

参数

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current - Continuous

Peak Collector Current

Peak Base Current

Total Power Dissipation

Junction Temperature

Storage Temperature Range

符号

Symbol

VCBO

VCEO

VEBO

IC

ICM

IBM

Ptot

Tj

Tstg

DATA SHEET

数值

Rating

-100

-80

-5.0

-1.0

-1.5

-200

830

150

-55～150

单位

Unit

V

V

V

A

A

mA

mW

℃

℃

电性能参数 / Electrical Characteristics(Ta=25℃)

参数

Parameter

Collector Cut-Off Current

Emitter Cut-Off Current

DC Current Gain

Collector to Emitter Saturation

Voltage

Base to Emitter Voltage

Transition Frequency

符号

Symbol

ICBO

IEBO

hFE(1)

hFE(2)

hFE(3)

VCE(sat)

VBE

fT

测试条件

Test Conditions

最小值 典型值 最大值

Min Typ Max

VCB=-30V IE=0

-0.1

VEB=-5.0V IC=0

-0.1

VCE=-2.0V IC=-150mA 63

250

VCE=-2.0V IC=-500mA 40

VCE=-2.0V IC=-5.0mA 63

IC=-500mA IB=-50mA

-0.5

IC=-500mA VCE=-2.0V

-1.0

VCE=-5.0V IC=-50mA

f=100MHz

100

单位

Unit

μA

μA

V

V

MHz

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