BC847AW Просмотр технического описания (PDF) - Jiangsu Changjiang Electronics Technology Co., Ltd

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Компоненты Описание

производитель

BC847AW

SOT-323 Plastic-Encapsulate Transistors

Jiangsu Changjiang Electronics Technology Co., Ltd 

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Collector-base breakdown voltage

BC846W

BC847W

BC848W

Collector-emitter breakdown voltage

BC846W

BC847W

BC848W

Emitter-base breakdown voltage

BC846W

BC847W

BC848W

Collector Cutoff Current

DC current gain

BC846AW,847AW,848AW

BC846BW,847BW,848BW

BC847CW,BC848CW

BC846AW,847AW,848AW

BC846BW,847BW,848BW

BC847CW,BC848CW

Collector-emitter saturation voltage

Base-emitter saturation voltage

Base-emitter voltage

Transition frequency

Collector output capacitance

Noise figure

BC846AW,847AW,848AW

BC846BW,847BW,848BW

BC847CW,BC848CW

Symbol

VCBO

VCEO

VEBO

ICBO

hFE

VCE(sat)

VBE(sat)

VBE(on)

fT

Cob

NF

Test conditions

IC= 10µA, IE=0

IC= 10mA, IB=0

IE= 1 µA, IC=0

VCB=30V

VCE= 5V, IC= 10µA

VCE= 5V, IC= 2mA

IC=10mA, IB=0. 5mA

IC=100mA, IB= 5mA

IC=10mA, IB=0. 5mA

IC=100mA, IB= 5mA

VCE= 5V, IC= 2mA

VCE= 5V, IC= 10mA

VCE= 5 V, IC= 10mA

f=100MHz

VCB=10V,f=1MHz

VCE=5V,Ic=0.2mA,

f=1KHz,RS=2KΩ

BW=200Hz

Min Typ Max Unit

80

50

V

30

65

45

V

30

6

6

V

5

15 nA

90

150

270

110

220

200

450

420

800

0.25

V

0.6

0.7

V

0.9

580 660 700

mV

770

100

MHz

4.5 pF



10 dB

4

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