BDX85A Просмотр технического описания (PDF) - New Jersey Semiconductor
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BDX85A Datasheet PDF : 2 Pages
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Silicon NPN Darlington Power Transistor
BDX85/A/B/C
ELECTRICAL CHARACTERISTICS
Tc=25'C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BDX85
Collector-Emitter
VcEO(SUS) Sustaining Voltage
BDX85A
BDX85B
BDX85C
VcE(sat)-i Collector-Emitter Saturation Voltage |C=4A; IB= 16mA
VcE(sat)-2 Collector-Emitter Saturation Voltage lc= 8A; IB= 40mA
VBE(sat) Base-Emitter Saturation Voltage
lc= 8A; IB= 80mA
VBE(on)
ICBO
Base-Emitter On Voltage
BDX85
Collector
Cutoff Current
BDX85A
BDX85B
BDX85C
BDX85
lc= 4A; VCE= 3V
VCB= 45V; IE= 0
VcB=45V;lE=0;Tc=150r
Vca= 60V; IE= 0
VCB=60V;lE=0;Tc=150'C
VCB= 80V; IE= 0
VCB=80V;lE=0;Tc=150'C
VCB=100V;le=0
VCB=100V;lE=0;Tc=150'C
VCE= 22V; IB= 0
Collector
ICEO
Cutoff Current
BDX85A VCE= 30V; IB= 0
BDX85B VCE= 40V; IB= 0
BDX85C VCE=50V;-|B=0
IEBO
hpE-1
Emitter Cutoff Current
DC Current Gain
VEB= 5V; lc= 0
lc= 3A; VCE= 3V
hFE-2
hFE-3
DC Current Gain
DC Current Gain
lc= 4A; VCE= 3V
lc= 8A; VCE= 4V
MIN TYP. MAX UNIT
45
60
V
80
100
2.0
V
4.0
V
4.0
V
2.8
V
0.5
5.0
0.5
5.0
mA
0.5
5.0
0.5
5.0
1.0
mA
1000
750
200
2.0
mA
18000
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