BDW40 Просмотр технического описания (PDF) - New Jersey Semiconductor
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BDW40 Datasheet PDF : 2 Pages
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Silicon NPN Darlington Power Transistor
BDW40
ELECTRICAL CHARACTERISTICS
TC=25'C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VcEO(SUS) Collector-Emitter Sustaining Voltage lc= 30mA; IB= 0
VcE(sat)-1 Collector-Emitter Saturation Voltage lc= 5A; IB= 10rnA
VcE(sat)-2 Collector-Emitter Saturation Voltage lc=10A;lB=50mA
VsE(on) Base-Emitter On Voltage
lc= 10A; VCE=4V
60
V
2.0
V
3.0
V
3.0
V
Iceo
Collector Cutoff Current
VCB= 60V; IE= 0
1.0
mA
ICEO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
hpE-1
DC Current Gain
hpE-2
DC Current Gain
fr
Current-Gain—Bandwidth Product
COB
Output Capacitance
VCE= 30V; la= 0
VEB= 5V; lc= 0
lc= 5A; VCE= 4V
1000
lc=10A;VCE=4V
250
lc=3A;VCE=3V;ftest=1MHz
4
lE=0;VCB=10V;ftest= 0.1MHz
2.0 mA
2.0
mA
MHz
200
PF
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