BDX86B Просмотр технического описания (PDF) - New Jersey Semiconductor
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BDX86B Datasheet PDF : 2 Pages
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Silicon PNP Darlington Power Transistor
BDX86/A/B/C
ELECTRICAL CHARACTERISTICS
Tc=25'C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
BDX86
-45
BDX86A
-60
Collector-Emitter
VcEO(SUS) Sustaining Voltage
i~— "i nrimA- i — n
V
BDX86B
-80
BDX86C
-100
VcE(sat)-i Collector-Emitter Saturation Voltage lc=-4A;lB=-16mA
\/CE(sat)-2 Collector-Emitter Saturation Voltage lc= -8A;IB= -40mA
VsE(sat) Base-Emitter Saturation Voltage
|c= -8A; IB= -80mA
VeE(on)
ICBO
Base-Emitter On Voltage
BDX86
Collector
Cutoff Current
BDX86A
BDX86B
BDX86C
BDX86
lc= -4A; VCE= -3V
VCB= -45V; IE= 0
VCB=-45VlE=0;Tc=150r
VCB= -60V; IE= 0
Vcs=-60V; IE=0;TC=150'C
VCB= -80V; IE= 0
VCB=-80V; IE=0;TC=150'C
Vca=-100V;lE=0
VCB= -100V; IE=0;TC= 150 "C
VCE= -22V; IB= 0
-2.0
V
-4.0
V
-4.0
V
-2.8
V
-0.5
-5.0
-0.5
-5.0
mA
-0.5
-5.0
-0.5
-5.0
Collector
ICEO
Cutoff Current
BDX86A VCE= -30V; IB= 0
BDX86B VCE= -40V; IB= 0
-1.0
mA
BDX86C VC6= -50V; IB= 0
IEBO
Emitter Cutoff Current
VEB= -5V; lc= 0
-2.0
mA
hpE-1
DC Current Gain
lc= -3A; VCE= -3V
1000
hFE-2
DC Current Gain
lc= -4A; VCE= -3V
750
18000
hpE-3
DC Current Gain
lc= -8A; VGE= -4V
200
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