BD536 Просмотр технического описания (PDF) - New Jersey Semiconductor

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BD536

Silicon PNP PowerTransistor

New Jersey Semiconductor 

Silicon PNP Power Transistor

ELECTRICAL CHARACTERISTICS

Tc=25'C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VcEO(SUS) Collector-Emitter Sustaining Voltage lc= -100mA; IB= 0

VcE(sat)-i Collector-Emitter Saturation Voltage lc= -2A;IB= -0.2A

VcE(sat)-2 Collector-Emitter Saturation Voltage lc= -6A; IB= -0.6A

VeE(on) Base-Emitter On Voltage

ICBO

Collector Cutoff Current

lc= -2A ; VCE= -2V

VCB= -60V;IE= 0

ICES

Collector Cutoff Current

VOE= -60V; VBE= 0

IEBO

Emitter Cutoff Current

VEB= -5V; lc= 0

hpE-1

DC Current Gain

lc=-10mA;VCE=-5V

hFE-2

DC Current Gain

lc=-0.5A; VCE=-2V

hpE-3

DC Current Gain

lc= -2A ; VCE= -2V

fj

Current-Gain—Bandwidth Product lc=-0.5A; VCE=-1V

BD536

MIN MAX UNIT

-60

V

-0.8

V

-0.8

V

-1.5

V

-0.1

mA

-0.1

mA

-1.0

mA

20

40

25

3.0

MHz

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