BDX87 Просмотр технического описания (PDF) - New Jersey Semiconductor
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BDX87 Datasheet PDF : 2 Pages
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Silicon NPN Darlington Power Transistor
BDX87/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise specifled
SYMBOL
PARAMETER
CONDITIONS
BDX87
Collector-Emitter
VcEO(SUS) Sustaining Voltage
BDX87A
BDX87B
r _ inrimA- l~— n
BDX87C
VcE(sat)-1 Collector-Emitter Saturation Voltage lc= 6A; IB= 24mA
VcE(sat)-2 Collector-Emitter Saturation Voltage lc= 12A; IB= 120mA
VeE(sat) Base-Emitter Saturation Voltage
IC=12A;IB= 120mA
VsE(on)
ICBO
Base-Emitter On Voltage
BDX87
Collector
Cutoff Current
BDX87A
BDX87B
BDX87C
BDX87
lc= 6A; VCE= 3V
VCB= 45V; IE= 0
VcB=45V;lE=0;Tc=150'C
VCa= 60V;IE= 0
VcB=60V;lE=0;Tc=150°C
VCB= 80V; IE= 0
VCB=80V;lE=0;Tc=150-C
VCB= 100V; IE=0
VCB= 100V;IE=0;TC=150'C
VCE= 22V; la= 0
Collector
I CEO
Cutoff Current
BDX87A VCE= 30V; IB= 0
BDX87B VCE= 40V; IB= 0
BDX87C VCE= 50V; IB= 0
IEBO
Emitter Cutoff Current
VEB= 5V; lc= 0
hpE-1
DC Current Gain
lc= 5A; VCE= 3V
hFE-2
DC Current Gain
lc= 6A; VCE= 3V
hFE-3
DC Current Gain
lc=12A;VCE=3V
MIN TYP. MAX UNIT
45
60
V
80
100
2.0
V
3.0
V
4.0
V
2.8
V
0.5
5.0
0.5
5.0
mA
0.5
5.0
0.5
5.0
1.0
mA
1000
750
100
2.0
mA
18000
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