BD546B Просмотр технического описания (PDF) - New Jersey Semiconductor
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BD546B Datasheet PDF : 2 Pages
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^zmi-Conductoi
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, One.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
Silicon PNP Power Transistor
BD546/A/B/C
DESCRIPTION
• Collector Current -lc= -15A
• Collector-Emitter Breakdown Voltage-
: V(BR)CEo= -40V(Min)- BD546; -60V(Min)- BD546A
-SOV(Min)- BD546B; -IOOV(Min)- BD546C
• Complement to Type BD545/A/B/C
APPLICATIONS
• Designed for use in general purpose power amplifier and
switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE UNIT
BD546
-40
BD546A
-60
VCBO Collector-Base Voltage
V
BD546B
-80
BD546C -100
BD546
-40
VCEO
Collector-Emitter
Voltage
BD546A
-60
V
BD546B
-80
BD546C -100
VEBO Emitter-Base Voltage
-5
V
Ic
Collector Current-Continuous
Collector Power Dissipation
@ Ta=25'C
PC
Collector Power Dissipation
@ TC=25°C
Tj
Junction Temperature
Tstg
Storage Temperature Range
-15
A
3.5
W
85
150
•c
-65-150 °c
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-c
Thermal Resistance, Junction to Case
1 .47 "CM/
Thermal Resistance,Junction to Ambient 35.7 'CM/
f1
123
.3
^ PIN 1.BASE
2. COLLECTOR
3.EMIHER
TO-3PN package
BY —+
uC- *UQ [
„'
itU" ~<\
1 1-
K
_- C _*s-
^
*^ ^-
G * *L
-*»-J
* *-R
mm
DIM WIN MAX
A 19.90 20.10
B 15.50 15.70
C 4.70 4.90
D 0.90 1.10
b 1.90 2.10
F 3.40 3.60
b 2.90 3.10
H 3,20 3.40
J 0,595 0.605
K 20.50 20.70
L 1.90 2.10
N 10.89 10,91
Q 4,90 5,10
H 3.35 3.45
S 1,995 2.005
U 5.90 6.10
Y 9,90 1 10,10
-«-N-—t-- D
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