BIC702M Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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Компоненты Описание

производитель

BIC702M

Bias Controlled Monolithic IC VHF/UHF RF Amplifier

Hitachi -> Renesas Electronics 

Maximum Channel Power

Dissipation Curve

200

150

100

50

0

50

100

150

200

Ambient Temperature Ta (°C)

BIC702M

Power Gain vs.

Gate2 to Source Voltage

30

25

20

15

10

V DS = 5 V

5

V G1 = open

f = 200 MHz

0

1

2

3

4

Gate2 to Source Voltage V G2S (V)

Noise Figure vs.

Gate2 to Source Voltage

5

4

V DS = 5 V

V G1 = open

f = 200 MHz

3

2

1

0

1

2

3

4

Gate2 to Source Voltage V G2S (V)

Power Gain vs.

Gate2 to Source Voltage

30

25

20

15

10

V DS = 5 V

5

V G1 = open

f = 900 MHz

0

1

2

3

4

Gate2 to Source Voltage V G2S (V)

5

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