QSD128 Просмотр технического описания (PDF) - Fairchild Semiconductor
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QSD128 Datasheet PDF : 4 Pages
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PLASTIC SILICON INFRARED
PHOTOTRANSISTOR
QSD128
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Operating Temperature
Storage Temperature
Soldering Temperature (Iron)(2,3,4)
Soldering Temperature (Flow)(2,3)
Collector-Emitter Voltage
Emitter-Collector Voltage
Power Dissipation(1)
Symbol
TOPR
TSTG
TSOL-I
TSOL-F
VCE
VEC
PD
Rating
-40 to +100
-40 to +100
240 for 5 sec
260 for 10 sec
30
5
100
NOTE:
1. Derate power dissipation linearly 1.33 mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Soldering iron 1/16” (1.6mm) minimum from housing.
5. ! = 880 nm, AlGaAs.
ELECTRICAL / OPTICAL CHARACTERISTICS (TA =25°C)
PARAMETER
TEST CONDITIONS
SYMBOL
MIN
TYP
Peak Sensitivity Wavelength
!PS
—
880
Reception Angle
"
—
±12
Collector Emitter Dark Current
Collector Emitter Breakdown
VCE = 10 V, Ee = 0
IC = 1 mA
ICEO
—
—
BVCEO
30
—
Emitter Collector Breakdown
IE = 100 µA
BVECO
5
—
On-State Collector Current(5)
Ee = 0.5 mW/cm2, VCE = 5 V
IC (ON)
1.60
—
Saturation Voltage(5)
Ee = 0.5 mW/cm2, IC = 0.5 mA
VCE (SAT)
—
—
Rise Time
Fall Time
VCC = 5 V, RL = 100 #$IC = 0.2 mA
tr
tf
—
—
7
7
Unit
°C
°C
°C
°C
V
V
mW
MAX
—
—
100
—
—
—
0.4
—
—
UNITS
nm
Deg.
nA
V
V
mA
V
µs
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7/20/01 DS300360
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