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BUK9510-55A

N-channel TrenchMOS logic level FET

NXP Semiconductors. 

NXP Semiconductors

BUK9510-55A

N-channel TrenchMOS logic level FET

4. Limiting values

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

VDS

VDGR

VGS

ID

drain-source voltage

drain-gate voltage

gate-source voltage

drain current

Tj ≥ 25 °C; Tj ≤ 175 °C

RGS = 20 kΩ

VGS = 5 V; Tj = 25 °C; see Figure 3;

see Figure 1

VGS = 5 V; Tj = 25 °C; see Figure 1;

see Figure 3

IDM

peak drain current

VGS = 5 V; Tj = 100 °C; see Figure 1

Tmb = 25 °C; pulsed; tp ≤ 10 µs;

see Figure 3

Ptot

total power dissipation

Tstg

storage temperature

Tj

junction temperature

Source-drain diode

Tmb = 25 °C; see Figure 2

IS

source current

Tmb = 25 °C

ISM

peak source current

Avalanche ruggedness

EDS(AL)S

non-repetitive drain-source

avalanche energy

[1] Continuous current is limited by package.

[2] Current is limited by power dissipation chip rating.

pulsed; tp ≤ 10 µs; Tmb = 25 °C

ID = 75 A; Vsup ≤ 55 V; RGS = 50 Ω;

VGS = 5 V; Tj(init) = 25 °C; unclamped

Min

-

-

-15

[1] -

[2] -

[1] -

-

-

-55

-55

[2] -

[1] -

-

-

Max Unit

55 V

55 V

15 V

75 A

100 A

70 A

400 A

200 W

175 °C

175 °C

100 A

75 A

400 A

333 mJ

BUK9510-55A

Product data sheet

All information provided in this document is subject to legal disclaimers.

Rev. 02 — 17 February 2011

© NXP B.V. 2011. All rights reserved.

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