BUK9510-55A Просмотр технического описания (PDF) - NXP Semiconductors.

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BUK9510-55A

N-channel TrenchMOS logic level FET

NXP Semiconductors. 

NXP Semiconductors

BUK9510-55A

N-channel TrenchMOS logic level FET

120

ID

(A)

100

03nf89

Capped at 75 A due to package

80

60

40

20

0

25 50 75 100 125 150 175 200

Tmb (°C)

120

Pder

(%)

80

03aa16

40

0

0

50

100

150

200

Tmb (°C)

Fig 1. Normalized continuous drain current as a

function of mounting base temperature

Fig 2. Normalized total power dissipation as a

function of mounting base temperature

103

ID

(A)

RDSon = VDS / ID

102

Capped at 75 A

due to package

10 P

tp

δ=

T

tp

t

T

1

1

DC

10

03nf86

tp = 10 μs

100 μs

1 ms

10 ms

100 ms

102

VDS (V)

Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage

BUK9510-55A

Product data sheet

All information provided in this document is subject to legal disclaimers.

Rev. 02 — 17 February 2011

© NXP B.V. 2011. All rights reserved.

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