BYV27 Просмотр технического описания (PDF) - New Jersey Semiconductor
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BYV27 Datasheet PDF : 3 Pages
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Ultra fast low-loss
controlled avalanche rectifiers
BYV27 series
SYMBOL
PARAMETER
IFRM
repetitive peak forward current
BYV27-50 to 400
BYV27-500 and 600
IFRM
repetitive peak forward current
BYV27-50 to 200
BYV27-300 and 400
BYV27-500 and 600
IFSM
non-repetitive peak forward current
BYV27-50 to 400
BYV27-500 and 600
ERSM
non-repetitive peak reverse
avalanche energy
Tstg
storage temperature
Tj
junction temperature
CONDITIONS
Ttp = 85 °C; see Figs 8, 9 and 10
Tamb = 60 °C;
see Figs 11,12 and 13
t = 10 ms half sine wave;
TJ = Tj max prior to surge;
VR = N/RRMmax
L = 120 mH; Tj = Tj max prior to
surge; inductive load switched off
see Fig. 17
ELECTRICAL CHARACTERISTICS
T = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
VF
forward voltage
BYV27-50 to 200
BYV27-300 and 400
BYV27-500 and 600
VF
forward voltage
BYV27-50 to 200
BYV27-300 and 400
BYV27-500 and 600
V(BR)R
reverse avalanche breakdown
voltage
BYV27-50
BYV27-100
BYV27-150
BYV27-200
BYV27-300
BYV27-400
BYV27-500
BYV27-600
IR
reverse current
CONDITIONS
MIN.
IF = 2 A; Tj = Tj max;
see Figs 18, 19 and 20
-
-
IF = 2 A;
see Figs 18, 19 and 20
-
-
IR = 0.1 mA
55
110
165
220
330
440
560
675
VR - VRRMmax;
-
see Fig. 21
VR = VRRMmaxI
—
TJ = 165 °C; see Fig. 21
MIN. MAX. UNIT
-
20 A
-
16 A
14 A
-
13 A
-
11 A
-
50 A
40 A
—
20 mJ
-65
+175 °C
-65
+175 °C
TYP. MAX. UNIT
0.78 V
-
0.82 V
-
1.00 V
0.98 V
-
1.05 V
-
1.25 V
-
-V
-
-V
-
-V
-
-V
-
-V
-
-V
-
-V
-
-V
-
5 HA
—
150 HA
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