BYV27 Просмотр технического описания (PDF) - New Jersey Semiconductor

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BYV27

Ultra fast low-loss controlled avalanche rectifiers

New Jersey Semiconductor 

Ultra fast low-loss

controlled avalanche rectifiers

BYV27 series

SYMBOL

PARAMETER

trr

reverse recovery time

BYV27-50 to 200

BYV27-300 to 600

cd

diode capacitance

BYV27-50 to 200

BYV27-300 and 400

BYV27-500 and 600

dip

maximum slope of reverse recovery

dt

current

CONDITIONS

when switched from

!F = 0 . 5 A t o l R = 1 A;

measured at IR = 0.25 A;

see Fig. 27

f= 1 MHz;VR = 0;

see Figs 22, 23 and 24

when switched from

IF = 1 A to VR > 30 V

and dlp/dt = -1 A/us;

see Fig. 26

MIN.

_

-

-

TYP.

-

100

80

65

MAX. UNIT

25 ns

50 ns

_

PF

- PF

- PF

4 A/us

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-tp

Rth j-a

thermal resistance from junction to tie-point

thermal resistance from junction to ambient

CONDITIONS

lead length = 10 mm

note 1

VALUE

46

100

UNIT

KA/V

K/W

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