CF5010 Просмотр технического описания (PDF) - Nippon Precision Circuits
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CF5010 Datasheet PDF : 25 Pages
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SM5010 series
5V operation: VDD = 4.5 to 5.5V, VSS = 0V
30 ≤ f ≤ 50MHz: Ta = −20 to +80°C, 50 < f ≤ 70MHz: Ta = −15 to +75°C unless otherwise noted.
Parameter
Symbol
Condition
Rating
Unit
min
typ
max
HIGH-level output voltage VOH Q: Measurement cct 1, VDD = 4.5V, IOH = 16mA
3.9
4.2
–
V
LOW-level output voltage
VOL Q: Measurement cct 2, VDD = 4.5V, IOL = 16mA
–
0.3
0.4
V
HIGH-level input voltage
VIH INHN
2.0
–
–
V
LOW-level input voltage
VIL INHN
–
–
0.8
V
Output leakage current
IZ
Q: Measurement cct 2, INHN = LOW,
VDD = 5.5V
VOH = VDD
VOL = VSS
–
–
10
µA
–
–
10
IDD1
Measurement cct 3, load cct 1,
INHN = open, CL = 15pF
5010FNE
f = 70MHz
–
25
50
Current consumption
IDD2
Measurement cct 3, load cct 1,
INHN = open, CL = 50pF
5010FNA, FNC
f = 40MHz
–
5010FND
f = 50MHz
–
23
45
mA
25
50
INHN pull-up resistance
RUP Measurement cct 4
5010FNA
40
100
250
kΩ
3.57
4.2
4.83
Feedback resistance
Rf Measurement cct 5
5010FNC
5010FND
2.63
3.1
3.57
kΩ
1.87
2.2
2.53
5010FNE
1.87
2.2
2.53
5010FNA
11.7
13
14.3
5010FNC
9.9
11
12.1
CG
5010FND
11.7
13
14.3
Built-in capacitance
Design value. A monitor pattern on a 5010FNE
wafer is tested.
5010FNA
7.2
8
8.8
pF
13.5
15
16.5
5010FNC
15.3
17
18.7
CD
5010FND
15.3
17
18.7
5010FNE
13.5
15
16.5
SEIKO NPC CORPORATION —13
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