BCW66 Просмотр технического описания (PDF) - NXP Semiconductors.
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BCW66 Datasheet PDF : 14 Pages
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Table 8.
400
hFE
300
(1)
200
(2)
100
(3)
006aaa131
BCW66 series
45 V, 800 mA NPN general-purpose transistor
600
hFE
(1)
400
(2)
200
(3)
006aaa132
0
10- 1
1
10
102
103
IC (mA)
VCE = 1 V
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = -55 °C
Figure 3. BCW66F: DC current gain as a function of
collector current; typical values
800
006aaa133
hFE
600
(1)
0
10- 1
1
10
102
103
IC (mA)
VCE = 1 V
(1) amb = 150 °C
(2) amb = 25 °C
(3) amb = -55 °C
Figure 4. BCW66G: DC current gain as a function of
collector current; typical values
10
006aaa134
VBEsat
(V)
400
(2)
(3)
200
1
(1)
(2)
(3)
0
10- 1
1
10
102
103
IC (mA)
VCE = 1 V
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = -55 °C
Figure 5. BCW66H: DC current gain as a function of
collector current; typical values
10- 1
10- 1
1
10
102
103
IC (mA)
IC/IB = 10
(1) Tamb = -55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
Figure 6. BCW66F: Base-emitter saturation voltage as a
function of collector current; typical values
BCW66x_SER
Product data sheet
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Rev. 1 — 21 April 2017
© Nexperia B.V. 2017. All rights reserved.
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