FZT603(1995) Просмотр технического описания (PDF) - Diodes Incorporated.

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Компоненты Описание

производитель

FZT603
(Rev.:1995)

SOT223 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR

Diodes Incorporated. 

TYPICAL CHARACTERISTICS

FZT603

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

-55°C

+25° C

+100°C

+ 175° C

IC/IB=100

0

0.01

0.1

1

10

IC - Collector Current (Amps)

VCE(sat) v IC

2.5

2.0

1.5

1.0

0.5

-55°C

+25°C

+100°C

VCE =5V

0.001

0.01

0.1

1

10

IC - Collector Current (Amps)

hFE v IC

2.2

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

-55°C

+25°C

+100°C

+175°C

IC/IB=100

0.01

0.1

1

10

IC - Collector Current (Amps)

VBE(sat) v IC

Single Pulse Test

10

Tamb = 25 °C

1

DC

1s

100ms

10ms

1ms

0.1

100µS

0.01

0.1

1

10

100

VCE - Collector Voltage (Volts)

Safe Operating Area

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

-55°C

+25°C

+100°C

0.01

0.1

VCE=5V

1

10

IC - Collector Current (Amps)

VBE(on) v IC

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