FX20ASJ-06-T13 Просмотр технического описания (PDF) - Renesas Electronics
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FX20ASJ-06-T13 Datasheet PDF : 7 Pages
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FX20ASJ-06
Performance Curves
Power Dissipation Derating Curve
50
40
30
20
10
0
0
50
100
150
200
Case Temperature Tc (°C)
Output Characteristics (Typical)
–50
PD =
35W
–40
–30
VGS =
–10V
–6V
–8V
Tc = 25°C
Pulse Test
–5V
–20
–4V
–10
–3V
0
0
–2
–4
–6
–8 –10
Drain-Source Voltage VDS (V)
On-State Voltage vs.
Gate-Source Voltage (Typical)
–10
Tc = 25°C
Pulse Test
–8
–6
–4
–2
–10A
ID =
–40A
–20A
0
0
–2 –4 –6 –8 –10
Gate-Source Voltage VGS (V)
Rev.2.00 Aug 07, 2006 page 3 of 6
Maximum Safe Operating Area
–2
–102
–7
–5
–3
100µs
–2
–101
–7
DC
–5
–3
–2
–100
–7
–5
Tc = 25°C
Single Pulse
–3
–2
–2 –3 –5–7–100 –2 –3 –5–7–101 –2 –3 –5–7–102 –2
Drain-Source Voltage VDS (V)
Output Characteristics (Typical)
–20
VGS =
–10V
–16
–8V
–6V
–12
–5V
–8
Tc = 25°C
Pulse Test
–4V
PD =
35W
–4
–3V
0
0 –1.0 –2.0 –3.0 –4.0 –5.0
Drain-Source Voltage VDS (V)
On-State Resistance vs.
Drain Current (Typical)
200
Tc = 25°C
Pulse Test
160
VGS = –4V
120
–10V
80
40
0
–10–1 –2 –3 –5–7–100 –2 –3 –5–7–101 –2 –3 –5–7–102
Drain Current ID (A)
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