HM4033 Просмотр технического описания (PDF) - Galaxy Semi-Conductor

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производитель

HM4033

PNP EPITAXIAL PLANAR TRANSISTOR

Galaxy Semi-Conductor 

Production specification

PNP EPITAXIAL PLANAR TRANSISTOR

HM4033

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter

Symbol Test conditions

MIN MAX UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

V(BR)CBO

V(BR)CEO

V(BR)EBO

ICBO

IEBO

DC current gain

hFE

Collector-emitter saturation voltage VCE(sat)

Base-emitter saturation voltage

VBE(sat)

Transition frequency

fT

Collector output capacitance

Cob

IC=-10μA,IE=0

IC=-10mA,IB=0

IE=-10μA,IC=0

VCB=-60V

VEB=-5V,IC=0

VCE=-5V,IC=-0.1mA

VCE=-5V,IC=-0.1A

VCE=-5V,IC=-0.5A

VCE=-5V,IC=-1A

IC=-150mA, IB= -15mA

IC=-500mA, IB= -50mA

IC=-150mA, IB= -15mA

IC=-500mA, IB= -50mA

VCE=-10V, IC= -50mA,

f=100MHz

VCB=-10V,IE=0,f=1MHz

-80

V

-80

V

-5

V

-100 nA

-100 nA

75

100

70

25

-0.15

V

-0.5

-0.9

V

-1.1

100

MHz

20

pF

TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

E078

Rev.A

www.gmicroelec.com

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