MJD32CG Просмотр технического описания (PDF) - ON Semiconductor

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MJD32CG

Complementary Power Transistors DPAK For Surface Mount Applications

ON Semiconductor 

MJD31, NJVMJD31T4G, MJD31C, NJVMJD31CT4G (NPN), MJD32, NJVMJD32T4G,

MJD32C, NJVMJD32CG, NJVMJD32CT4G (PNP)

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage (Note 1)

(IC = 30 mAdc, IB = 0)

MJD31, NJVMJD31T4G, MJD32, NJVMJD32T4G

MJD31C, NJVMJD31CT4G, MJD32C, NJVMJD32CG, NJVMJD32CT4G

Collector Cutoff Current

(VCE = 40 Vdc, IB = 0)

MJD31, NJVMJD31T4G, MJD32, NJVMJD32T4G

(VCE = 60 Vdc, IB = 0)

MJD31C, NJVMJD31CT4G, MJD32C, NJVMJD32CG, NJVMJD32CT4G

Collector Cutoff Current

(VCE = Rated VCEO, VEB = 0)

Emitter Cutoff Current

(VBE = 5 Vdc, IC = 0)

ON CHARACTERISTICS (Note 1)

DC Current Gain

(IC = 1 Adc, VCE = 4 Vdc)

(IC = 3 Adc, VCE = 4 Vdc)

Collector−Emitter Saturation Voltage

(IC = 3 Adc, IB = 375 mAdc)

Base−Emitter On Voltage

(IC = 3 Adc, VCE = 4 Vdc)

DYNAMIC CHARACTERISTICS

Current Gain − Bandwidth Product (Note 2)

(IC = 500 mAdc, VCE = 10 Vdc, ftest = 1 MHz)

Small−Signal Current Gain

(IC = 0.5 Adc, VCE = 10 Vdc, f = 1 kHz)

1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.

2. fT = ⎪hfe⎪• ftest.

Symbol

Min

VCEO(sus)

40

100

ICEO

−

−

ICES

−

IEBO

−

hFE

25

10

VCE(sat)

−

VBE(on)

−

fT

3

hfe

20

Max

Unit

Vdc

−

−

mAdc

50

50

mAdc

20

mAdc

1

−

50

Vdc

1.2

Vdc

1.8

MHz

−

−

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