MJD128 Просмотр технического описания (PDF) - Inchange Semiconductor

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MJD128

Silicon PNP Darlington Power Transistor

Inchange Semiconductor 

isc Silicon PNP Darlington Power Transistor

isc Product Specification

MJD128

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA, IB= 0

-120

V

VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -4A ,IB= -16mA

-2.0

V

VCE(sat)-2 Collector-Emitter Saturation voltage IC= -8A ,IB= -80mA

-4.0

V

VBE(sat)

Base-Emitter Saturation Voltage

IC=-8A; IB= -80mA

-4.5

V

VBE(on)

Base-Emitter On Voltage

IC= -4A ; VCE= -4V

-2.8

V

ICBO

Collector Cutoff Current

VCB= -120V, IE= 0

-10

uA

ICEO

Collector Cutoff Current

VCE= -120V, IB= 0

-5

mA

IEBO

Emitter Cutoff Current

VEB= -5V; IC= 0

-2

mA

hFE-1

DC Current Gain

IC= -4A ; VCE= -4V

1000

12000

hFE-2

DC Current Gain

IC= -8A ; VCE= -4V

100

COB

Output Capacitance

IE= 0; VCB= -10V,f= 0.1MHz

300

pF

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