ELECTRICAL CHARACTERISTICS (continued) (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
BRAKE CIRCUIT
Gate-Emitter Leakage Current (VCE = 0 V, VGE = ± 20 V)
IGES
–
Collector-Emitter Leakage Current (VCE = 1200 V, VGE = 0 V)
ICES
TJ = 25°C
–
TJ = 125°C
–
Gate-Emitter Threshold Voltage (VCE = VGE, IC = 1.0 mA)
Collector-Emitter Breakdown Voltage (IC = 10 mA, VGE = 0)
VGE(th)
V(BR)CES
4.0
1200
Collector-Emitter Saturation Voltage (VGE = 15 V, IC = 8.0 A)
VCE(SAT)
–
Input Capacitance (VGE = 0 V, VCE = 10 V, f = 1.0 MHz)
Cies
–
Input Gate Charge (VCE = 600 V, IC = 8.0 A, VGE = 15 V)
Fall Time – Inductive Load
(VCE = 600 V, IC = 8.0 A, VGE = 15 V, RG = 150 Ω)
QT
–
tfi
–
Turn-On Energy
(VCE = 600 V, IC = 8.0 A, VGE = 15 V, RG = 150 Ω)
E(on)
–
Turn-Off Energy
(VCE = 600 V, IC = 8.0 A, VGE = 15 V, RG = 150 Ω)
E(off)
–
Diode Forward Voltage (IF = 8.0 A)
VF
–
Diode Reverse Leakage Current
Thermal Resistance – IGBT
Thermal Resistance – Diode
IR
–
RθJC
–
RθJC
–
Typ
–
–
–
6.0
1300
2.5
1000
75
350
–
–
1.6
–
–
–
Max
Unit
± 20
µA
100
µA
500
µA
8.0
V
–
V
3.5
V
–
pF
–
nC
500
ns
1.0
mJ
1.0
mJ
2.2
V
50
µA
2.2
°C/W
3.7
°C/W
MOTOROLA
MHPM7B8A120A
3