PEMZ1 Просмотр технического описания (PDF) - NXP Semiconductors.
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PEMZ1 Datasheet PDF : 7 Pages
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NXP Semiconductors
NPN/PNP general purpose transistors
Product data sheet
PEMZ1
FEATURES
• 300 mW total power dissipation
• Very small 1.6 × 1.2 mm ultra thin package
• Self alignment during soldering due to straight leads
• Replaces two SC-75/SC-89 packaged transistors on
same PCB area
• Reduced required PCB area
• Reduced pick and place costs.
PINNING
PIN
1, 4
2, 5
6, 3
emitter
base
collector
DESCRIPTION
TR1; TR2
TR1; TR2
TR1; TR2
APPLICATIONS
• General purpose switching and amplification
handbook, halfp6age
5
4
• Complementary MOSFET driver for switch mode power
supply
• Complementary driver for audio amplifiers.
65 4
TR2
TR1
DESCRIPTION
NPN/PNP transistor pair in a SOT666 plastic package.
MARKING
TYPE NUMBER
PEMZ1
MARKING CODE
FZ
1
2
3
123
Top view
MAM456
Fig.1 Simplified outline (SOT666) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
Per transistor; for the PNP transistor with negative polarity
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
Tamb ≤ 25 °C; note 1
Per device
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
MIN.
MAX.
UNIT
−
50
V
−
40
V
−
5
V
−
100
mA
−
200
mA
−
200
mA
−
200
mW
−65
+150
°C
−
150
°C
−65
+150
°C
−
300
mW
2001 Nov 07
2
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