2SB856 Просмотр технического описания (PDF) - New Jersey Semiconductor

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2SB856

Silicon PNP Power Transistor

New Jersey Semiconductor 

20 STERN AVE.

SPRINGFIELD, NEW JERSEY 07081

U.S.A.

, Una.

Silicon PNP Power Transistor

TELEPHONE: (973) 376-2922

(212)227-6005

FAX: (973) 376-8960

2SB856

DESCRIPTION

• Collector Current: lc= -3A

• Low Collector Saturation Voltage

: VCE(sa<)= -1.2V(Max)@lc= -2A

• High Collector Power Dissipation

APPLICATIONS

• Designed for low frequency power amplifier applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25'C)

SYMBOL

PARAMETER

VALUE UNIT

VCBO Collector-Base Voltage

-50

V

VCEO Collector-Emitter Voltage

-50

V

VEBO Emitter-Base Voltage

-4

V

Ic

Collector Current-Continuous

Total Power Dissipation

PC

@ TC=25°C

Tj

Junction Temperature

-3

A

25

W

150

r

Tstg

Storage Temperature Range

-45-150 'C

i ^ . ^.,,

2

'< . i

''

] "' ^.

PIH: 1 Base

2 Collector

3 E-itter

TO-220C package

-i B P. x--™

u r i^vT

r

.jLLj

A

"" 1

-

rH

L

K

0

f , H oh

*" * j

••-* RK

c

4

mm

DM WIN MAX

A 15.50 15.90

B 9.90 10,20

C 4.20 4,50

D 0.70 0.90

F 3.40 3.70

G 4.98 5.18

H 2 68 2.90

J 0.44 0.60

K 13. 00 13.40

L 1.10 1.45

Q 2.70 2.90

R 2.30 2.70

S 1.29 1.35

U 6.45 6.65

V 8.66 8.86

N.I Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without

notice. Information furnished by NJ Semi-Conductors is believed to he both accurate and reliable at the time of noii

|o press. I loucvcr. N.I Scmi-Conductors assumes no responsibility lor any errors or omissions discovered in itsuse.

N.I Semi-Condticlors encourages customers lo \crily thai datasheets are cunvnl before placing orders.

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