2SB613 Просмотр технического описания (PDF) - New Jersey Semiconductor

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2SB613

Silicon PNP Power Transistors

New Jersey Semiconductor 

Silicon PNP Power Transistors

ELECTRICAL CHARACTERISTICS

Tj=25°C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-Emitter Breakdown Voltage lc= -30mA ; IB= 0

V(BR)CBO Collector-Emitter Breakdown Voltage lc=.1mA;lE=0

V(BR)EBO Emitter-Base Breakdown Voltage

lE=-1mA;lc=0

VcE(sat) Collector-Emitter Saturation Voltage IC=-10A;IB=-1A

ICBO

Collector Cutoff Current

VCB= -250V; IE= 0

IEBO

Emitter Cutoff Current

riFE

DC Current Gain

VEB= -5V; 'lc= 0

lc=-1A;VCE=-2V

2SB613

MIN MAX UNIT

-250

V

-250

-5

V

-3.0

V

-0.1 mA

-0.1 mA

35

200

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