2SB1389 Просмотр технического описания (PDF) - New Jersey Semiconductor
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2SB1389 Datasheet PDF : 2 Pages
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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon PNP Darlington Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2SB1389
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -60V(Min)
• High DC Current Gain-
: hFE= 1000(Min)@ (VCE= -3V, lc= -2A)
• ^R M^M iT-^A,_^TJ12i1
|P
IF j
j3
PIS: 1 Base
2 Collector
TO~220Fa package
APPLICATIONS
• Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25°C)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
-60
V
Vceo
Collector-Emitter Voltage
-60
V
VEBO
Emitter-Base Voltage
-7
V
Ic
Collector Current-Continuous
-4
A
ICM
Collector Current-Peak
Collector Power Dissipation
@Ta=25°C
PC
Collector Power Dissipation
@Tc=25t
Tj • Junction Temperature
-8
A
2
W
25
150
•c
Tstg
Storage Temperature
-55-150 'C
•—
- Ci-*-
J
/
A?i r"
'
i
,rf
i'
H
K;
•
:«r° ».-,.
f*
mm
DIM WIN MAX
A 16.35 17.15
B 9.54 10.10
C 4.36 465
D 0.75 0,90
F 3.20 3.40
G 6.90 7.20
H 5.15 5.45
J 0.45 0.75
K 13.35 13.65
L 1.10 1,30
N 4.9S 5.18
Q 4,85 5.15
Rus
2.55
2.70
1.75
3.25
2.90
2.05
V 1.30 1.50
N.I Senii-Corfduetors reserves the right to change test conditions, parameter limits and package dimensions nithout
notice. Information furnished hy N.I Semi-Conductors is believed 10 he both accurate and reliable at the time ofyoing
lo press. ||o\\e\er. N.I Semi-Conductors assumes no re.sponsihilii\r anv errors or omissions discovered in its use.
N I Senii-C'i'iuluclors enauirasies customers to \erily that datasheets are current belore placing order's.
Ouality Semi-Conductors
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