2SC4883 Просмотр технического описания (PDF) - New Jersey Semiconductor

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2SC4883

Silicon NPN Power Transistor

New Jersey Semiconductor 

^E.mi'dondu.cto'L Lp 10duets., Una

20 STERN AVE.

SPRINGFIELD, NEW JERSEY 07081

U.S.A.

Silicon NPN Power Transistor

TELEPHONE: (973) 376-2922

(212)227-6005

FAX: (973) 376-8960

2SC4883

DESCRIPTION

• Collector-Emitter Breakdown Voltage-

: V(BR)CEo=150V(Min)

• Complement to Type 2SA1859

APPLICATIONS

• For audio output driver and TV velocity-modulation

applications.

PIN 1.BASE

2 COLLECTOR

3. EMITTER

TO-220F package

C•

• s-

ABSOLUTE MAXIMUM RATINGS(Ta=25'C)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

150

V

VCEO

Collector-Emitter Voltage

150

V

VEBO

Emitter-Base Voltage

6

V

Ic

Collector Current-Continuous

2

A

IB

Base Current-Continuous

Collector Power Dissipation

PC

@ TC=25'C

Tj

Junction Temperature

1

A

20

W

150

°c

Tstg

Storage Temperature Range

-55-150

"C

J --

mm

DIM MIN

A 14.95

B 10.00

C 4.40

D 0.75

F 3.10

H 3.70

J 0.50

K 13.4

L 1.10

N 5.00

Q 2.70

R 2.20

S 2.65

U 6.40

MAX

15.05

10.10

4.60

0.80

3.30

3.90

0.70

13.6

1.30

5.20

2.90

2.40

2.85

6.60

N.I Semi-Conductors reserves the right to change test conditions, parameter limits arid package dimensions \\ithout

notice. Information furnished by N.I Semi-Conductors is believed to he both accurate and reliable at the time of going

to press. I loucver, N,l Semi-Coiuluetors assumes no responsibility for any errors or omissions discovered in its use.

N.I Semi-Conductors encourages customers to verily that datasheets are current before placing orders.

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