2SD2142 Просмотр технического описания (PDF) - Foshan Blue Rocket Electronics Co.,Ltd.

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Компоненты Описание

производитель

2SD2142

Silicon NPN transistor in a SOT-23 Plastic Package

Foshan Blue Rocket Electronics Co.,Ltd. 

2SD2142K

Rev.F Apr.-2017

极限参数 / Absolute Maximum Ratings(Ta=25℃)

参数

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

符号

Symbol

VCBO

VCEO

VEBO

IC

PC

Tj

Tstg

DATA SHEET

数值

Rating

40

32

12

0.3

0.2

150

-55～150

单位

Unit

V

V

V

A

W

℃

℃

电性能参数 / Electrical Characteristics(Ta=25℃)

参数

Parameter

Collector-Base Breakdown

Voltage

Collector-Emitter Breakdown

Voltage

符号

Symbol

测试条件

Test Conditions

VCBO IC =100μA IE=0

VCEO IC =10mA IB=0

Emitter-Base Breakdown Voltage VEBO IE=100μA IC=0

Collector Cut-Off Current

ICBO VCB=30V IE=0

Emitter Base Cut-Off Current

IEBO VEB=12V

Ic=0

DC Current Gain

Collector to Emitter Saturation

Voltage

Transition Frequency

Collector Output Capacitance

hFE VCE=3.0V

VCE(sat)

fT

Cob

Ic=200mA

VCE=5.0V

f=100MHz

VCB=10V

f=1.0MHz

Ic=0.1A

IB=0.2mA

IE=-10mA

IE=0

最小值 典型值 最大值 单位

Min Typ Max Unit

40

V

32

12

5000

V

V

0.1 μA

0.1 μA

1.4 V

200

MHz

2.5

pF

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